Recent Advances in Thermoelectric Performance of Half-Heusler Compounds

TL;DR

This review summarizes recent progress in enhancing the thermoelectric performance of Half-Heusler compounds, focusing on strategies like strain-relief and dopant resonant states that have increased the figure of merit (zT) from 1 to 1.5.

Contribution

The paper highlights novel approaches such as strain-relief and dopant resonant states to improve the thermoelectric efficiency of Half-Heusler compounds.

Findings

ZT has increased from 1 to 1.5 since 2013.

Strategies like strain-relief and dopant resonant states are effective.

Half-Heusler compounds show promise for heat-to-electricity conversion.

Abstract

Half-Heusler phases (space group F43m, C1b) have recently captured much attention as promising thermoelectric materials for heat-to-electric power conversion in the mid-to-high temperature range. The most studied ones are the RNiSn-type half-Heusler compounds, where R represents refractory metals Hf, Zr, and Ti. These compounds have shown a high-power factor and high-power density, as well as good material stability and scalability. Due to their high thermal conductivity, however, the dimensionless figure of merit (zT) of these materials has stagnated near 1 for a long time. Since 2013, the verifiable ZT of half-Heusler compounds has risen from 1 to near 1.5 for both n- and p-type compounds in the temperature range of 500 to 900 degrees C. In this brief review, we summarize recent advances as well as approaches in achieving the high ZT reported. In particular, we discuss the less-exploited strain-relief effect and dopant resonant state effect studied by the author and his collaborators in more detail. Finally, we point out directions for further development. Keywords: half-Heusler compounds; figure of merit; power density; lattice disorder; dopant resonant states