# Residual strain in free-standing CdTe nanowires overgrown with HgTe

## TL;DR

This study examines the crystal structure and strain distribution in CdTe nanowires overgrown with HgTe, revealing complex strain patterns and high structural uniformity using advanced microscopy and X-ray diffraction techniques.

## Contribution

It provides detailed analysis of strain in heterostructured CdTe/HgTe nanowires, highlighting the complex strain patterns and confirming single-crystalline growth.

## Key findings

- Both materials show lattice constant changes compared to bulk.
- Complex uniaxial and shear strains are present in the nanowires.
- High ensemble uniformity and single-crystalline structure confirmed.

## Abstract

We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small lattice mismatch between the two materials. We find that both CdTe and HgTe show changes in lattice constant compared to the respective bulk lattice constants. The measurements reveal a complex strain pattern with signatures of both uniaxial and shear strains present in the overgrown nanowires.