Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G., Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K., Vandersypen

TL;DR
This paper provides a comprehensive benchmarking of single- and two-qubit gate fidelities in silicon spin qubits, introducing a novel method for more reliable two-qubit fidelity estimation and highlighting progress towards fault-tolerant quantum computing.
Contribution
It introduces character randomized benchmarking for silicon spin qubits, enabling more accurate two-qubit fidelity measurements and addressing cross-talk and error correlations.
Findings
Two-qubit CPhase gate fidelity measured using character randomized benchmarking.
Identification of cross-talk and error correlations in silicon spin qubits.
Progress towards achieving fault-tolerant quantum computation thresholds.
Abstract
We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Quantum and electron transport phenomena
