An alternative to the topological interpretation of the transverse resistivity anomalies in SrRuO3

TL;DR

This paper challenges the common topological Hall effect explanation for transverse resistivity anomalies in SrRuO3, proposing an alternative model based on inhomogeneous magnetoelectric properties that better explains the observed phenomena.

Contribution

It introduces a new model that accounts for anomalies in transverse resistivity without relying on the topological Hall effect, clarifying the physical origin of these features.

Findings

The anomalies are explained without invoking the topological Hall effect.

Inhomogeneous magnetoelectric properties account for the resistivity anomalies.

The study provides a fundamental understanding of magneto-transport in SrRuO3.

Abstract

We clarify the physical origin of anomalies in transverse resistivity often observed in exotic materials, such as SrRuO3, in which the Berry curvature is manifested in the transport properties. The previously attributed mechanism for the anomalies, the topological Hall effect (THE), is refuted by our thorough investigations as well as formulation of a model considering inhomogeneous magnetoelectric properties in the material. Our analyses fully explain every feature of the anomalies without resorting to the THE. The present results establish a fundamental understanding, which was previously overlooked, of magneto-transport properties in such exotic materials.