Strong Hot Carrier Effects Observed in a Single Nanowire Heterostructure
Iraj Abbasian Shojaei, Samuel Linser, Giriraj Jnawali, N., Wickramasuriya, Howard E. Jackson, Leigh M. Smith, Fariborz Kargar, Alexander, A. Balandin, Xiaoming Yuan, Philip Caroff, H. Hoe Tan, and Chennupati, Jagadish
TL;DR
This study uses Transient Rayleigh Scattering to reveal that InP shells in GaAsSb/InP nanowire heterostructures significantly suppress phonon emission, resulting in pronounced hot carrier effects at low temperatures.
Contribution
It demonstrates the impact of InP shells on hot carrier dynamics in nanowires, highlighting a new method to control carrier thermalization.
Findings
InP shells suppress LO phonon emission at low temperatures.
Hot carrier effects are significantly stronger in core-shell nanowires.
Bare GaAsSb nanowires do not exhibit substantial hot carrier effects.
Abstract
We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatures leading to strong hot carrier effects.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.