Mechanism of N\'eel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

TL;DR

This paper investigates how electrical currents can switch the magnetic order in antiferromagnetic thin films, revealing domain wall motion and two mechanisms that enable efficient control of magnetic states.

Contribution

It introduces a combined experimental approach using magnetotransport and imaging to elucidate the mechanisms behind Néel order switching in antiferromagnetic thin films.

Findings

Over one third of domains switched with current pulses

Switching involves domain wall motion and anisotropy variation

Two mechanisms contribute to efficient magnetic switching

Abstract

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.