Ultrafast hot carrier dynamics of ZrTe$_5$ from time-resolved optical reflectivity
Xiu Zhang, Hai-Ying Song, X. C. Nie, Shi-Bing Liu, Yang Wang,, Cong-Ying Jiang, Shi-Zhong Zhao, Genfu Chen, Jian-Qiao Meng, Yu-Xia Duan, H., Y. Liu

TL;DR
This study explores the ultrafast hot carrier dynamics in ZrTe$_5$ using time-resolved optical reflectivity, revealing complex relaxation processes and the influence of many-body effects on its transient behavior.
Contribution
It provides new insights into the phonon-mediated recombination and complex electron thermalization processes in ZrTe$_5$, highlighting the role of many-body effects.
Findings
Phonon-mediated across-gap recombination observed.
Two distinct relaxation processes identified.
Many-body effects significantly influence transient dynamics.
Abstract
We investigate the hot carrier dynamics of ZrTe by ultrafast time-resolved optical reflectivity. Our results reveal a phonon-mediated across-gap recombination, consistent with its temperature-dependent gap nature as observed previously by photoemission. In addition, two distinct relaxations with a kink feature right after initial photoexcitation are well resolved, suggesting the complexity of electron thermalization process. Our findings indicate that correlated many-body effects play important role for the transient dynamics of ZrTe.
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