SOT-MRAM 300mm integration for low power and ultrafast embedded memories

TL;DR

This paper reports the first full-scale integration of SOT-MRAM on 300mm wafers using CMOS-compatible processes, achieving ultrafast switching, high endurance, and low power consumption for embedded memory applications.

Contribution

It introduces a CMOS-compatible process for integrating top-pinned perpendicular MTJ on 300mm wafers, demonstrating high-performance SOT-MRAM devices.

Findings

Endurance > 5x10^10 cycles

Switching time of 210 ps

Power consumption as low as 300 pJ

Abstract

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.