Growth of epitaxial ReS2 thin film by pulsed laser deposition
B. Vishal, H. Sharona, U. Bhat, A. Paul, M. B. Sreedhara, V. Rajaji,, S. C. Sarma, C. Narayana, S. C. Peter, and R. Datta
TL;DR
This paper demonstrates the growth of large-area epitaxial ReS2 thin films using pulsed laser deposition, highlighting substrate effects and potential for device applications.
Contribution
It introduces a method for growing high-quality epitaxial ReS2 films on different substrates using PLD, with improved film quality on MoS2 templates.
Findings
Epitaxial growth achieved below 300°C
Films are polycrystalline above 300°C
MoS2 template improves film quality
Abstract
We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. The smoothness and quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 epitaxial thin film over large area for practical device application.
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