Nanowire quantum dots tuned to atomic resonances
Lorenzo Leandro, Christine P. Gunnarsson, Rodion Reznik, Klaus D., J\"ons, Igor Shtrom, Artem Khrebtov, Takeshi Kasama, Valery Zwiller, George, Cirlin, Nika Akopian

TL;DR
This paper demonstrates the controlled growth and tuning of nanowire-quantum-dot structures on silicon, achieving emission frequencies aligned with atomic transitions, which advances hybrid quantum systems and quantum network applications.
Contribution
It introduces a method for growing and tuning nanowire quantum dots on silicon substrates to match atomic transition frequencies, with precise control over emission wavelength and linewidth.
Findings
Quantum dots tuned to atomic resonances on silicon substrates.
Emission wavelength tunable over 30 nm around 765 nm.
Photon linewidth measured at 9.4 μeV using rubidium transitions.
Abstract
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of powerful possibilities, such as precise positioning of the emitters, excellent photon extraction efficiency and direct electrical contacting of quantum dots. Notably, nanowire structures can be grown on silicon substrates, allowing for a straightforward integration with silicon-based photonic devices. In this work we show controlled growth of nanowire-quantum-dot structures on silicon, frequency tuned to atomic transitions. We grow GaAs quantum dots in AlGaAs nanowires with a nearly pure crystal structure and excellent optical properties. We precisely control the dimensions of quantum dots and their position inside nanowires, and demonstrate that the…
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