Coherent control of defect spins in silicon carbide above 550 K

TL;DR

This paper demonstrates the coherent control of defect spins in silicon carbide at temperatures above 550 K, revealing temperature-dependent spin properties and enabling high-temperature quantum sensing applications.

Contribution

It provides the first experimental demonstration of high-temperature coherent control of defect spins in silicon carbide, extending understanding of their thermal properties and sensing capabilities.

Findings

Zero-field-splitting has polynomial temperature dependence.

Spin coherence time decreases with increasing temperature.

Successful thermal sensing at around 450 K using Ramsey method.

Abstract

Great efforts have been made to the investigation of defects in silicon carbide for their attractive optical and spin properties. However, most of the researches are implemented at low and room temperature. Little is known about the spin coherent property at high temperature. Here, we experimentally demonstrate coherent control of divacancy defect spins in silicon carbide above 550 K. The spin properties of defects ranging from room temperature to 600 K are investigated, in which the zero-field-splitting is found to have a polynomial temperature dependence and the spin coherence time decreases as the temperature increases. Moreover, as an example of application, we demonstrate a thermal sensing using the Ramsey method at about 450 K. Our experimental results would be useful for the investigation of high temperature properties of defect spins and silicon carbide-based broad-temperature range quantum sensing.