Evidence for quasi-one-dimensional charge density wave in CuTe by angle-resolved photoemission spectroscopy
Kenan Zhang, Xiaoyu Liu, Haoxiong Zhang, Ke Deng, Mingzhe Yan, Wei, Yao, Mingtian Zheng, Eike F.Schwier, Kenya Shimada, Jonathan D. Denlinger,, Yang Wu, Wenhui Duan, and Shuyun Zhou

TL;DR
This study uses ARPES to reveal a high-temperature quasi-one-dimensional charge density wave in CuTe, showing how Fermi surface nesting and electron-phonon interactions contribute to its formation.
Contribution
It provides the first detailed ARPES analysis of CuTe's electronic structure and elucidates the mechanisms behind its high-temperature CDW transition.
Findings
Observation of a 190 meV anisotropic CDW gap in CuTe
Temperature and doping can fill the CDW gap
Both Fermi surface nesting and electron-phonon coupling are key to CDW emergence
Abstract
We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron doping through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon coupling play important roles in the emergence of the CDW.
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