Topological Hall effect in thin films of Mn$_{1.5}$PtSn

TL;DR

This study reports the observation of a significant topological Hall effect in high-quality Mn$_{1.5}$PtSn thin films, demonstrating its robustness across various compositions and thicknesses, and highlighting its potential for spintronic applications.

Contribution

First demonstration of a large, robust topological Hall effect in Mn$_{1.5}$PtSn thin films grown by magnetron sputtering, with detailed analysis across different stoichiometries and film thicknesses.

Findings

Topological Hall resistivity is comparable to anomalous Hall resistivity.

The effect persists up to 4 T below 185 K.

Robust across multiple stoichiometries and thicknesses.

Abstract

Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $\mu_{0}H \approx 4~$T below the spin reorientation transition temperature, $T_{s}=185$~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between $0.76~\mu\Omega$cm and $1.55~\mu\Omega$cm at 150~K.