Quantized dislocations for functional and quantum materials
Mingda Li, Ricardo Pablo-Pedro

TL;DR
This paper explores the development of quantized dislocations, a quantum field theoretical approach, to better understand and predict the influence of dislocations on the functional and quantum properties of materials.
Contribution
It introduces the dislon theory as a novel quantum field theoretical tool for analyzing dislocations and their effects on material functionalities, supported by case studies.
Findings
Dislon theory provides new insights into dislocation effects on materials.
Application of dislon leads to novel predictions for material properties.
Quantum field theory enhances understanding of dislocation-related phenomena.
Abstract
Dislocations have a profound influence on materials functional properties. In this perspective, we discuss the recent development of quantized dislocations - a theoretical tool that aims to compute the role of dislocations on materials' functionalities, at a full quantum field theoretical level. After a brief discussion of the motivation and a pedagogical introduction of quantization, we focus on a few case studies of dislon theory, to see how dislon can be applied to solve a given materials functionality problem and lead to new predictions. We conclude by visioning a few more open questions. With the aid of the powerful quantum field theory, the dislon approach may enable plenty opportunities to compute multiple functional and quantum properties in a dislocated crystal at a new level of clarity.
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Taxonomy
TopicsBoron and Carbon Nanomaterials Research · Surface and Thin Film Phenomena · Ga2O3 and related materials
