Hyperfine interaction in atomically thin transition metal dichalcogenides

TL;DR

This paper provides a theoretical analysis of hyperfine interactions in monolayer transition metal dichalcogenides, revealing their potential for long coherence times in quantum dot applications due to unique spin-valley locking effects.

Contribution

It introduces a group theory-based analysis of intervalley hyperfine interactions, highlighting the Ising-type interaction in the valence band and its implications for quantum dot design.

Findings

Hyperfine interaction exhibits a helical in-plane structure due to spin-valley locking.

In the upper valence band, hyperfine interaction is of the Ising type.

Potential for creating atomically thin quantum dots with long coherence times.

Abstract

Localization of charge carriers in monolayers (MLs) of transition metal dichalcogenides (TMDs) dramatically increases spin and valley coherence times, and, by analogy with other systems, the role of the hyperfine interaction should enhance. We perform theoretical analysis of the intervalley hyperfine interaction in TMD MLs based on the group representation theory. We demonstrate, that the spin-valley locking leads to the helical structure of the in-plane hyperfine interaction. In the upper valence band the hyperfine interaction is shown to be of the Ising type, which can be used for fabrication of the atomically thin quantum dots with the long spin and valley coherence times.