Quantum Annealing Machines Based on Semiconductor Nanostructures

TL;DR

This paper reviews the potential of semiconductor nanostructures for quantum annealing machines, proposing the use of existing high-density memory technology to facilitate scalable qubit integration.

Contribution

It introduces a theoretical approach to develop semiconductor nanostructure-based QAMs using conventional memory technology, bridging electronics miniaturization and quantum computing.

Findings

Proposes using NAND flash memories for QAM implementation

Highlights the potential for scalable qubit systems from commercial electronics

Identifies challenges in controlling qubit interactions in semiconductor nanostructures

Abstract

The development of quantum annealing machines (QAMs) based on superconducting qubits has progressed greatly in recent years and these machines are now widely used in both academia and commerce. On the other hand, QAMs based on semiconductor nanostructures such as quantum dots (QDs) appear to be still at the initial elementary research stage because of difficulty in controlling the interaction between qubits. In this paper, we review a QAM based on a semiconductor nanostructures such as floating gates (FGs) or QDs from the viewpoint of the integration of qubits. We theoretically propose the use of conventional high-density memories such as NAND flash memories for the QAM rather than the construction of a semiconductor qubit system from scratch. A large qubit system will be obtainable as a natural extension of the miniaturization of commercial-grade electronics, although further effort will likely be required to achieve high-quality qubits.