Zener Tunneling Breakdown in Phase-Change Materials Revealed by Intense Terahertz Pulses
Yasuyuki Sanari, Takehiro Tachizaki, Yuta Saito, Kotaro Makino, Paul, Fons, Alexander V. Kolobov, Junji Tominaga, Koichiro Tanaka, Yoshihiko, Kanemitsu, Muneaki Hase, and Hideki Hirori

TL;DR
This study demonstrates how intense terahertz pulses induce Zener tunneling in phase-change materials, leading to localized conductivity changes and filamentary crystal growth, advancing understanding of ultrafast phase transitions.
Contribution
It reveals the nonlinear effects of intense THz pulses on phase-change materials and details the spatial-temporal dynamics of crystallization induced by electric field concentration.
Findings
Zener tunneling increases conductivity in Ge2Sb2Te5 under THz irradiation.
Localized electric fields cause Joule heating and nanometer-scale crystal growth.
Filamentary conductive domains form across the sample due to field-induced crystallization.
Abstract
We have systematically investigated the spatial and temporal dynamics of crystallization that occurs in the phase-change material Ge2Sb2Te5 upon irradiation with an intense THz pulse. THz pump and optical probe spectroscopy revealed that Zener tunneling induces a nonlinear increase in the conductivity of the crystalline phase. This result indicates that the large electric field associated with the THz pulses causes a nonlinear increase only at the edge of the crystallized area. The electric field concentrating in this area causes a temperature increase via Joule heating, which in turn leads to nanometer scale crystal growth parallel to the field and the formation of filamentary conductive domains across the sample.
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