Electron scattering by short range defects and resistivity of graphene

TL;DR

This paper models electron scattering by short-range defects in graphene to understand resistivity and proposes a method to determine defect parameters from experimental data, aligning well with observed results.

Contribution

It introduces a delta-shell potential approximation for short-range defect scattering in graphene and develops an inverse method to extract defect parameters from resistivity measurements.

Findings

The model accurately matches experimental resistivity data for suspended graphene.

The delta-shell potential effectively captures short-range defect effects.

The inverse procedure allows determination of defect characteristics from resistivity.

Abstract

The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct problem) and develop a procedure for determination of the defect potential from resistivity data (inverse problem). We use an approximation of the short-range perturbation by the delta-shell potential that is reasonable since it suppresses irrelevant short wavelength excitations. Our theoretical results proved to be in a good agreement with experiment on suspended monolayer graphene. It means that our model correctly describes essential features of the physical problem under consideration. It gives possibility to consider the inverse problem, i.e. on the basis of our results for direct problem to develop a procedure for determination of parameters of the monolayer graphene sample using experimental measurements for it. Thus the obtained results give new important possibilities, which can be used in numerous applications.