Role of Spin, Phonon and Plasmon Dynamics on Ferromagnetism in Cr doped 3C-SiC
Gyanti Prakash Moharana (IIT Madras), Rahul Kothari (IIT Madras), S., K. Singh (IMMT Bhubaneshwar), N. Harish Kumar (IIT Madras)

TL;DR
This study investigates the interplay of spin, phonon, and plasmon dynamics in Cr-doped 3C-SiC, revealing ferromagnetism above 760 K and elucidating defect-carrier interactions relevant for spintronics.
Contribution
It provides the first detailed analysis of multivalent Cr states, carrier-plasmon interactions, and magnetic behavior in Cr-doped 3C-SiC, linking defect states to high-temperature ferromagnetism.
Findings
Cr can exist in multivalent states in 3C-SiC.
Room temperature ferromagnetism observed with Curie temperature above 760 K.
Carrier density and polaron density are consistent and linked to defect interactions.
Abstract
The defect induced magnetism has initiated a lot of interest in field of spintronics. In this regard, SiC is a promising material because of its unique properties under extreme conditions. Hence it will be very much interesting to investigate the interaction between defects and itinerant carrier in doped SiC for spintronics application. We report the structural stability and magnetic interaction in Cr doped 3C-SiC synthesized by Thermal Plasma Technique. The EPR spectrum of undoped 3C-SiC shows a sharp resonance line corresponding to associated with the defects present in the system. Anomalous temperature evolution tendency of the relative intensity of EPR spectra can be attributed to magnetically correlated defects in the host matrix. For the first time we report the detailed quantitative analysis of X-band and Q-band EPR study in Cr doped 3C-SiC which reveals that Cr can be…
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