The Core Diffusion-Drift Field-Effect Transistor Theory Including Quantum and Interface Trap Capacitances

TL;DR

This paper presents a comprehensive diffusion-drift field-effect transistor model that explicitly includes quantum capacitance and interface trap effects, unifying electrostatics and current kinetics for accurate device analysis.

Contribution

It introduces a novel decomposition of FET modeling into universal current kinetics and material-specific electrostatics, incorporating quantum and trap capacitances consistently.

Findings

Explicit I-V characteristics as a function of channel charge

Unified treatment of quantum capacitance and interface traps

Enhanced accuracy in small-signal capacitance predictions

Abstract

We have decomposed the modeling of the field-effect transistors into the two independent parts: the current continuity based kinetics and the charge neutrality based electrostatics. The former part, that is universal for all FETs, leads to an explicit and closed form of I-V characteristics as a function of the total channel charge. The latter part, which is specific for a particular material and geometric configurations can be considered as an independent engineering task. The quantum capacitance and the interface trap density are consistently incorporated into the solution of the current continuity equation in the diffusion-drift approximation, providing a complete consistency in the current and the capacitance small-signal characteristics.