Low energy band structure in Bernal stacked hexlayer graphene: Landau fan diagram and resistance ridge

TL;DR

This study investigates the low-energy electronic band structure of Bernal-stacked hexlayer graphene using transport measurements, revealing a semimetallic nature with bilayer-like bands and gate-dependent ridge structures linked to mini-Dirac cones.

Contribution

It provides the first detailed analysis of the band structure and Landau levels in Bernal-stacked hexlayer graphene, highlighting the effects of electric fields and trigonal warping.

Findings

Hexlayer graphene consists of three overlapping bilayer-like bands.

Gate voltages significantly influence the band structure and Landau levels.

Ridge structures in resistivity originate from band bottoms and mini-Dirac cones.

Abstract

The low-energy band structure of Bernal-stacked hexlayer graphene was investigated by the measuring transport properties of high-mobility graphene samples equipped with a top and a bottom gate electrode at low temperature and in a magnetic field. By analyzing the Landau fan diagram, it was found that the hexlayer graphene consisted of three different bilayer-like bands that overlap and form a semimetal. The electronic band structure was significantly influenced by the perpendicular electric field generated by the top and bottom gate voltages. The Not fan diagram shows splitting of zero-mode Landau levels, while also the top and bottom gate voltage dependence of the resistivity at zero magnetic field shows ridge-like structure, similar to the one recently found in tetralayer graphene. It is shown that the ridge structure originates from the band structure of the Bernalstacked hexlayer graphene. Most of the ridges originate from the bottoms of the bilayer-like bands, and a few ridges originate from the energy gap structures which locally close due to trigonal warping and expected to form mini-Dirac cones.