Gate defined quantum dot realized in a single crystalline InSb nanosheet

TL;DR

This paper reports the creation of a gate-defined quantum dot in a single crystalline InSb nanosheet, demonstrating precise control and potential for quantum computing applications.

Contribution

It introduces a novel quantum dot device fabricated from a single crystalline InSb nanosheet grown by molecular-beam epitaxy, with demonstrated tunability and well-defined Coulomb blockade.

Findings

Observation of Coulomb diamonds indicating well-defined quantum dot

High tunability of the quantum dot via top gate control

Potential application in semiconductor-based quantum computing

Abstract

Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate-defined, planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.