Band Gap Modulation of Graphene on SiC
Stefan Kolev, Victor Atanasov, Hristiyan Aleksandrov, Teodor Milenov
TL;DR
This paper presents a method to engineer and modulate the band gap in graphene on SiC using numerical simulations inspired by analytical models, enabling potential electronic applications.
Contribution
It introduces a novel approach combining analytical and numerical techniques to control the band gap in graphene on SiC substrates.
Findings
Successful modulation of graphene's band gap through periodic corrugation.
Numerical simulations align with analytical predictions.
Potential for tailored electronic properties in graphene devices.
Abstract
A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.
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