Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
Daniel J. Terry, Viktor Z\'olyomi, Matthew Hamer, Anastasia V., Tyurnina, David G. Hopkinson, Alexander M. Rakowski, Samuel J. Magorrian,, Nick Clark, Yuri M. Andreev, Olga Kazakova, Konstantin Novoselov, Sarah J., Haigh, Vladimir I. Fal'ko, Roman Gorbachev

TL;DR
This paper reports tunable optical activity from infrared to violet in atomically thin GaSe, InSe, and their heterostructures, revealing new optical properties and interlayer excitonic photoluminescence with layer-dependent energy tuning.
Contribution
It introduces the first observation of interlayer excitonic photoluminescence in InSe-GaSe heterostructures and demonstrates broad spectral tunability in these 2D materials.
Findings
Optical activity covers violet to infrared spectrum.
First observation of interlayer excitonic PL in heterostructures.
Layer number controls excitonic transition energy.
Abstract
Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band gap in 2D crystals of InSe more than doubles in the monolayer compared to thick multilayer crystals, while the high mobility of conduction band electrons is promoted by their light in-plane mass. Here, we use Raman and PL measurements of encapsulated few layer samples, coupled with accurate atomic force and transmission electron microscope structural characterisation to reveal new optical properties of atomically thin GaSe preserved by hBN encapsulation. The band gaps we observe complement the…
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