Noncollinearity-modulated electronic properties of the monolayer CrI$_3$

TL;DR

This paper demonstrates that introducing noncollinear magnetization into monolayer CrI$_3$ can effectively modulate its electronic properties, enabling potential applications in nanoscale devices and quantum technologies.

Contribution

It is the first to show how spin spiral states alter the electronic structure of monolayer CrI$_3$ using first-principles calculations.

Findings

Spin spiral states lower conduction and valence bands.

Magnetic domain walls can form 1D conducting channels.

Potential applications include electron-hole separation and quantum dots.

Abstract

Introducing noncollinear magnetization into a monolayer CrI$_3$ is proposed to be an effective approach to modulate the local electronic properties of the two-dimensional (2D) magnetic material. Using first-principles calculation, we illustrate that both the conduction and valence bands in the monolayer CrI$_3$ are lowered down by spin spiral states. The distinct electronic structure of the monolayer noncollinear CrI$_3$ can be applied in nanoscale functional devices. As a proof of concept, we show that a magnetic domain wall can form a one-dimensional conducting channel in the 2D semiconductor via proper gating. Other possible applications such as electron-hole separation and identical quantum dots are also discussed.