High-mobility indirect excitons in wide single quantum well
C. J. Dorow, M. W. Hasling, D. J. Choksy, J. R. Leonard, L. V. Butov,, K. W. West, L. N. Pfeiffer
TL;DR
This paper reports on wide single quantum well heterostructures that exhibit high-mobility indirect excitons with narrow emission spectra, voltage-tunable energy, and long lifetimes, advancing both fundamental studies and device applications.
Contribution
It introduces WSQW heterostructures with enhanced IX mobility and controllable properties, offering a new platform for excitonic research and device development.
Findings
High IX mobility in WSQW heterostructures
Spectrally narrow IX emission
Voltage-controllable IX energy and lifetime
Abstract
Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX energy, and long and voltage-controllable IX lifetime. This set of properties shows that WSQW heterostructures provide an advanced platform both for studying basic properties of IXs in low-disorder environments and for the development of high mobility excitonic devices.
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