Influence of deep levels on the electrical transport properties of CdZnTeSe detectors

TL;DR

This study examines how deep levels affect electrical transport in CdZnTeSe detectors, revealing that specific deep levels enhance charge transport properties, which is promising for detector performance.

Contribution

The paper provides a detailed analysis of deep levels in CdZnTeSe and their impact on electrical properties, combining experimental data with numerical simulations.

Findings

Deep levels near mid-gap dominate electrical behavior.

Hole trap indirectly enhances electron mobility-lifetime product.

Deep level structure favors high charge transport.

Abstract

We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier height and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap - one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS are favorable for high electrical charge transport.