Disentangling lattice and electronic contributions to the metal-insulator transition from bulk vs. layer confined RNiO$_3$
Alexandru B. Georgescu, Oleg E. Peil, Ankit Disa, Antoine Georges,, Andrew J. Millis

TL;DR
This study combines theoretical and experimental methods to distinguish the electronic and lattice effects in the metal-insulator transition of NdNiO$_3$, revealing that electronic confinement dominates over lattice distortions in ultra-thin films.
Contribution
It provides a novel approach to disentangle electronic and lattice contributions in complex oxides by comparing bulk and layered samples, validated through combined theory and experiments.
Findings
Lattice distortion alone cannot induce the transition in bulk NdNiO$_3$.
Quantum confinement significantly reduces electronic dimensionality in thin films.
Confinement effects outweigh lattice effects in driving the transition.
Abstract
In complex oxide materials, changes in electronic properties are often associated with changes in crystal structure, raising the question of the relative roles of the electronic and lattice effects in driving the metal-insulator transition. This paper presents a combined theoretical and experimental analysis of the dependence of the metal-insulator transition of NdNiO on crystal structure, specifically comparing properties of bulk materials to one and two layer samples of NdNiO grown between multiple electronically inert NdAlO counterlayers in a superlattice. The comparison amplifies and validates a theoretical approach developed in previous papers and disentangles the electronic and lattice contributions, through an independent variation of each. In bulk NdNiO the correlations are not strong enough to drive a metal-insulator transition by themselves: a lattice…
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