Hole/Electron transport layers in tin-doped SBLN nano materials for hybrid solar cells

TL;DR

This study explores tin-doped layered perovskite SBN as a novel material for hole and electron transport layers in perovskite solar cells, demonstrating enhanced carrier mobility and tunable optical properties through microwave synthesis.

Contribution

It introduces a new tin-doped SBN material synthesized via microwave method, showing improved electrical and optical characteristics for solar cell applications.

Findings

Band gap decreases with tin doping

Carrier mobility increases by 112% at maximum doping

Nano particle formation enhances charge transport

Abstract

In this work, layered perovskite SBN was investigated in a new doped form for hole as well as electron transport layer (HTL/ETL) in perovskite solar cells. This work was targeted to conclude the effect of tin doping in lanthanum-bismuth layer SBN on optical energy band gap besides dominant electron-hole transportation to assist in perovskite solar cell applications. Thoroughly hard ball-milled compositions Sr1-xSnxBi1.95La0.05Nb2O9 (x=0.0, 0.01, 0.03, 0.05, 0.1 and 0.2) were prepared by special microwave synthesis to obtain fine (~10-60nm) mesoporous particle network of atomic level substitutions. Microwave synthesis was crucial in modifying dielectric, semiconducting and optical characteristics of prepared SBN materials. The band gap reduced in continuous manner and carrier mobility was increased by 112% for maximum tin doping. Nano particle formation assisted in raising carrier mobility by bridging bigger grains through nano particles. The effect of macro-sized grains and nano-sized grain boundaries on carrier transport were further investigated in detail using impedance spectroscopy.