Deep Learning Bandgaps of Topologically Doped Graphene
Yuan Dong, Chuhan Wu, Chi Zhang, Yingda Liu, Jianlin Cheng, Jian, Lin

TL;DR
This paper develops deep learning models to accurately predict the bandgaps of doped graphene with various topological dopant arrangements, enabling advanced material design at atomic scales.
Contribution
It introduces a novel CNN-based approach with a material descriptor system for predicting bandgaps in topologically doped graphene, surpassing traditional machine learning methods.
Findings
CNN models achieved R2 > 90% in bandgap prediction.
Deep learning outperformed support vector machine predictions.
Transfer learning improved predictions for larger systems.
Abstract
Manipulation of material properties via precise doping affords enormous tunable phenomena to explore. Recent advance shows that in the atomic and nano scales topological states of dopants play crucial roles in determining their properties. However, such determination is largely unknown due to the incredible size of topological states. Here, we present a case study of developing deep learning algorithms to predict bandgaps of boron-nitrogen pair doped graphene with arbitrary dopant topologies. A material descriptor system that enables to correlate structures with the bandgaps was developed for convolutional neuron networks (CNNs). Bandgaps calculated by the ab initio calculations and the corresponding structures were fed as input datasets to train VGG16 convolutional network, residual convolutional network, and concatenate convolutional network. Then these trained CNNs were used to…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsGraphene research and applications · Machine Learning in Materials Science · Advanced Memory and Neural Computing
