Epitaxial Growth and Electrical Properties of VO2 on LSAT (111) substrate

TL;DR

This study demonstrates the successful epitaxial growth of VO2 thin films on LSAT (111) substrates, revealing a sharp metal-insulator transition and structural changes confirmed by electrical and Raman measurements.

Contribution

It presents the first detailed epitaxial growth and characterization of VO2 on LSAT (111), including its electrical transition and structural analysis.

Findings

Sharp four-order resistance change at transition temperature

Distinct Raman spectra indicating structural transition

Epitaxial relationship established between VO2 and LSAT

Abstract

We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and VO2[001]||LSAT[11-2]. We observed a sharp four orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. We also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.