Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
J.G. Gluschke, J. Seidl, R.W. Lyttleton, D.J. Carrad, J.W. Cochrane,, S. Lehmann, L. Samuelson, A.P. Micolich

TL;DR
This paper demonstrates the use of ultra-thin parylene films as an effective organic gate insulator in nanowire transistors, offering a room-temperature deposition method that enables conformal coating and improved device performance.
Contribution
It introduces a reliable parylene deposition system and a novel fabrication strategy for nanowire transistors, expanding the potential of organic insulators in nanoscale electronics.
Findings
Achieved sub-threshold swings as low as 140 mV/dec
On/off ratios exceeding 10^3 at room temperature
Enabled conformal coating of nanowires and surface deposition over treated nanowires
Abstract
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally-coated nanowires, which we used to produce functional -gate and gate-all-around structures. These give sub-threshold swings as low as 140 mV/dec and on/off ratios exceeding at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations…
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