Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure
Sodai Harada, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida,, Hideaki Matsumura, Katsuhiro Tachibana, Hideki Hayashi, Ayaki Takeda, Koji, Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda,, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa

TL;DR
This paper presents XRPIX6E, a silicon-on-insulator pixel sensor with a pinned depleted diode structure that significantly improves spectral performance for X-ray astronomy, especially in event-driven readout mode.
Contribution
Introduction of XRPIX6E with a pinned depleted diode structure that reduces interference and enhances spectral performance in both readout modes.
Findings
Improved energy resolution at 6.4 keV: 236 eV (Frame mode), 335 eV (Event-Driven mode)
Enhanced spectral performance due to the buried p-well shield
Performance differences suggest further mechanisms affecting event-driven readout
Abstract
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, "XRPIX6E" equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts…
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