Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

TL;DR

This paper reviews recent experimental and modeling studies on mass transport phenomena in SiGe devices, focusing on dopant behavior, interdiffusion, and defect engineering relevant to various semiconductor applications.

Contribution

It provides a comprehensive overview of recent advances in experimental and continuum modeling of dopant diffusion, segregation, and interdiffusion in SiGe systems, highlighting their impact on device performance.

Findings

Dopant diffusion and segregation significantly affect SiGe device quality.

Interdiffusion influences the stability and performance of SiGe heterostructures.

Defect engineering can optimize material properties for specific applications.

Abstract

Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors, and Ge-on-Si based photonic devices.