Noisy defects in a doped Mott insulator

TL;DR

This study uses atomic scale shot-noise measurements to visualize and analyze dynamic oxygen dopant defects in a doped Mott insulator, revealing their impact on local electronic properties and potential for atomic-scale doping control.

Contribution

It introduces a novel shot-noise measurement technique to directly observe dynamic dopant defects in a Mott insulator at atomic resolution.

Findings

Identification of oxygen dopant atoms causing enhanced tunnelling noise.

Observation of charge dynamics affecting tunnelling mechanisms.

Potential for atomic-scale control of doping in superconductors.

Abstract

Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of a device. Similarly, as dopants can turn a Mott insulator into a high temperature superconductor, their electronic behaviour at the atomic scale is of much interest. Due to limited time resolution of conventional scanning tunnelling microscopes, most atomic scale studies in these systems focussed on the time averaged effect of dopants on the electronic structure. Here, by using atomic scale shot-noise measurements in the doped Mott insulator Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$, we visualize sub-nanometer sized objects where remarkable dynamics leads to an enhancement of the tunnelling current noise by at least an order of magnitude. From the position, current and energy dependence we argue that these defects are oxygen dopant atoms that were unaccounted for in previous scanning probe studies, whose local environment leads to charge dynamics that strongly affect the tunnelling mechanism. The unconventional behaviour of these dopants opens up the possibility to dynamically control doping at the atomic scale, enabling the direct visualization of the effect of local charging on e.g. high T$_{\text{c}}$ superconductivity.