Multi-beam RF accelerators for ion implantation

TL;DR

This paper presents a low-cost, wafer-based RF linear accelerator capable of multi-beam ion acceleration, demonstrating initial energy and current levels suitable for material surface modification applications.

Contribution

It introduces a novel wafer-stack RF linac design for multi-ion beams, enabling scalable ion energies and currents for industrial applications.

Findings

Achieved 0.5 MV/m acceleration gradient with a 3x3 beam array.

Ion energies reached approximately 10 keV with ~0.1 mA current.

Discussed scalability for higher energies and currents.

Abstract

We report on the development of a radio frequency (RF) linear accelerator (linac) for multiple-ion beams that is made from stacks of low cost wafers. The accelerator lattice is comprised of RF-acceleration gaps and electrostatic quadrupole focusing elements that are fabricated on 10-cm wafers made from printed circuit board or silicon. We demonstrate ion acceleration with an effective gradient of about 0.5 MV per meter with an array of 3 by 3 beams. The total ion beam energies achieved to date are in the 10 keV range with total ion currents in tests with noble gases of ~0.1mA. We discuss scaling of the ion energy (by adding acceleration modules) and ion currents (with more beams) for applications of this multi-beam RF linac technology to ion implantation and surface modification of materials.