State-of-the-Art Flash Chips for Dosimetry Applications
Preeti Kumari, Levi Davies, Narayana P. Bhat, En Xia Zhang, Michael W., McCurdy, Daniel M. Fleetwood, and Biswajit Ray

TL;DR
This paper demonstrates that commercial 20 nm Flash memory chips are sensitive to ionizing radiation, with fail-bit counts increasing with dose, indicating potential for dosimetry applications.
Contribution
It reveals the radiation sensitivity of modern Flash chips and explores their potential use as dosimeters, a novel application for commercial memory technology.
Findings
Fail-bit count increases with gamma and X-ray dose
X-ray irradiated devices show more fail bits due to dose enhancement
Potential for using Flash chips as radiation dosimeters
Abstract
In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.
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