Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
Fangyuan Yang, Zuocheng Zhang, Nai Zhou Wang, Guo Jun Ye, Wenkai Lou,, Xiaoying Zhou, Kenji Watanabe, Takashi Taniguchi, Kai Chang, Xian Hui Chen, and Yuanbo Zhang

TL;DR
This paper reports the observation of the quantum Hall effect in high-quality electron-doped black phosphorus FETs, achieved through a novel device design that enhances sample quality and edge channel formation, revealing strong electron interactions.
Contribution
The study introduces a prepatterned graphite local gate to improve black phosphorus 2DEG quality and enables the first observation of quantum Hall effect in electron-doped black phosphorus.
Findings
Quantized Hall plateaus observed in electron-doped black phosphorus.
Large effective mass and enhanced Landé g-factor indicating strong electron interactions.
Potential for exploring exotic many-body quantum states in fractional quantum Hall regime.
Abstract
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although the 2D hole gas in black phosphorus has reached high carrier mobilities that led to the observation of the integer quantum Hall effect, the improvement in the sample quality of the 2D electron gas (2DEG) has however been only moderate; quantum Hall effect remained elusive. Here, we obtain high quality black phosphorus 2DEG by defining the 2DEG region with a prepatterned graphite local gate. The graphite local gate screens the impurity potential in the 2DEG. More importantly, it electrostatically defines the edge of the 2DEG, which facilitates the formation of well-defined edge channels in the quantum Hall regime. The improvements enable us to…
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