Prediction and observation of the first antiferromagnetic topological insulator
Mikhail M. Otrokov, Ilya I. Klimovskikh, Hendrik Bentmann, Dmitry, Estyunin, Alexander Zeugner, Ziya S. Aliev, Sebastian Gass, Anja U. B., Wolter, Alexandra V. Koroleva, Alexander M. Shikin, Mar\'ia Blanco-Rey,, Martin Hoffmann, Igor P. Rusinov, Alexandra Yu. Vyazovskaya

TL;DR
This paper predicts and confirms MnBi$_2$Te$_4$ as the first intrinsic antiferromagnetic topological insulator, combining theoretical calculations and experimental measurements to demonstrate its nontrivial topological properties and magnetic structure.
Contribution
It provides the first experimental realization and comprehensive analysis of an intrinsic antiferromagnetic topological insulator, MnBi$_2$Te$_4$, using density functional theory and spectroscopy.
Findings
MnBi$_2$Te$_4$ hosts an AFM topological insulator phase.
The material exhibits a giant surface bandgap.
It is the first intrinsic magnetic topological insulator experimentally realized.
Abstract
Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of doping nonmagnetic TIs with 3d transition metal elements, however, such an approach leads to strongly inhomogeneous magnetic and electronic properties of these materials, restricting the observation of important effects to very low temperatures. Finding intrinsic MTI, i.e. a stoichiometric well-ordered magnetic compound, could be an ideal solution to these problems, but no such material was observed to date. Here, using density functional theory we predict and further confirm by means of…
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