High quality factor mechanical resonance in a silicon nanowire
D.E. Presnov, S. Kafanov, A.A. Dorofeev, I.V. Bozhev, A.S. Trifonov,, Yu.A. Pashkin, V.A. Krupenin

TL;DR
This study demonstrates high-quality factor silicon nanowire resonators at millikelvin temperatures, confirming theoretical predictions and highlighting their potential for ultra-sensitive mass sensing applications.
Contribution
The paper reports the fabrication and experimental characterization of silicon nanowire resonators with high quality factors at very low temperatures, aligning with Euler-Bernoulli theory predictions.
Findings
Resonance frequencies match Euler-Bernoulli estimates.
Achieved internal quality factor of 3.62×10^4 at 20 mK.
Potential mass sensitivity of approximately 6×10^{-20} g/Hz^{1/2}.
Abstract
Resonance properties of nanomechanical resonators based on doubly clamped silicon nanowires, fabricated from silicon-on-insulator and coated with a thin layer of aluminum, were experimentally investigated. Resonance frequencies of the fundamental mode were measured at a temperature of for nanowires of various sizes using the magnetomotive scheme. The measured values of the resonance frequency agree with the estimates obtained from the Euler-Bernoulli theory. The measured internal quality factor of the -long resonator, , exceeds the corresponding values of similar resonators investigated at higher temperatures. The structures presented can be used as mass sensors with an expected sensitivity .
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