Graphene Transistor Based on Tunable Dirac-Fermion-Optics

TL;DR

This paper introduces a graphene-based quantum switch utilizing Dirac-fermion-optics, demonstrating tunable control of Dirac fermion wavefunctions with high-temperature operation and minimal disorder effects.

Contribution

It presents a novel dual-source graphene device with a flat reflector for tunable Dirac-fermion-optics control, enabling robust, high-temperature quantum switching without an energy gap.

Findings

Operates up to 230 K temperature.

Works under high bias current density of 102 A/m.

Effectively separates classical and disorder contributions.

Abstract

The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several examples of electronic devices based on Dirac fermion dynamics have been demonstrated, including Klein tunneling, negative refraction and specular Andreev reflection. In this work, we present a quantum switch based on analogous Dirac-fermion-optics (DFO), in which the angle dependence of Klein tunneling is explicitly utilized to build tunable collimators and reflectors for the quantum wave function of Dirac fermions. We employ a novel dual-source design with a single flat reflector, which minimizes diffusive edge scattering and suppresses the background incoherent transmission. Our gate-tunable collimator-reflector device design enables measurement of the net DFO contribution in the switching device operation. We measure a full set of transmission coefficients of DFO wavefunction between multiple leads of the device, separating the classical contribution from that of any disorder in the channel. Since the DFO quantum switch demonstrated in this work requires no explicit energy gap, the switching operation is expected to be robust against thermal fluctuations and inhomogeneity length scales comparable to the Fermi wavelength. We find our quantum switch works at an elevated temperature up to 230 K and large bias current density up to 102 A/m, over a wide range of carrier densities. The tunable collimator-reflector coupled with the conjugated source electrodes developed in this work provides an additional component to build more efficient DFO electronic devices.