Electronic and Phonon Instabilities in Bilayer Graphene under Applied External Bias
E. Lora da Silva, M. C. Santos, J. M. Skelton, Tao Yang, T. Santos, S., C. Parker, and A. Walsh

TL;DR
This study investigates how external electric bias affects the electronic and phonon properties of bilayer graphene, revealing phase transitions, symmetry changes, and dynamical instabilities through detailed calculations.
Contribution
It provides a comprehensive analysis of electronic and phonon instabilities in bilayer graphene under bias, including new insights into phase transitions and layer-sliding dynamical instabilities.
Findings
Bias induces a semi-metal-to-semiconductor transition with a tunable band gap.
External bias causes symmetry reduction and charge inhomogeneities.
Phonon spectra are perturbed, with instabilities in AA stacking under bias.
Abstract
We have performed electronic-structure and lattice-dynamics calculations on the AB and AA structures of bilayer graphene. We study the effect of external electric fields and compare results obtained with different levels of theory to existing theoretical and experimental results. Application of an external field to the AB bilayer alters the electronic spectrum, with the bands changing under bias from a parabolic to a "Mexican hat" double-well structure. This results in a semi-metal-to-semiconductor phase transition, with the size of the induced electronic band-gap being tuneable through the field strength. A reduction of continuous symmetry from a hexagonal to a triangular lattice is also evidenced through in-plane electronic charge inhomogeneities between the sublattices. When spin-orbit coupling is turned on for the AB system, we find that the bulk gap decreases, gradually increasing…
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Thermal properties of materials
