Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells
Tom H. Anderson, Akhlesh Lakhtakia, Peter B. Monk

TL;DR
This paper develops a detailed 2D model to optimize nonhomogeneous InGaN Schottky-barrier thin-film solar cells, considering material composition, optical properties, and device geometry to enhance efficiency.
Contribution
It introduces a novel 2D simulation framework incorporating periodic nonhomogeneity and back-reflector effects for InGaN solar cells, optimizing their design for improved performance.
Findings
Optimized solar cell efficiency through geometry and material nonhomogeneity adjustments.
Demonstrated the impact of periodic composition variation on charge separation.
Showed enhanced light coupling via periodic back-reflector and guided wave modes.
Abstract
A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InGaN), thin-film, Schottky-barrier solar cells. The solar cells comprise a window, designed to reduce the reflection of incident light, Schottky-barrier and ohmic front electrodes, an n-doped InGaN wafer, and a metallic periodically corrugated back-reflector (PCBR). The ratio of indium to gallium in the wafer varies periodically throughout the thickness of the absorbing layer of the solar cell. Thus, the resulting InGaN wafer's optical and electrical properties are made to vary periodically. This material nonhomogeneity could be physically achieved by varying the fractional composition of indium and gallium during deposition. Empirical models for indium nitride and gallium nitride were combined using Vegard's law to determine the optical and electrical constitutive properties…
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