Anomalous and Topological Hall effect in Cu doped Sb2Te3 Topological Insulator

TL;DR

This study investigates the coexistence of anomalous and topological Hall effects in Cu-doped Sb2Te3 topological insulator through comprehensive magneto-transport and magnetization measurements, revealing bulk and surface state interactions.

Contribution

It provides the first detailed analysis of anomalous and topological Hall effects in Cu-doped Sb2Te3, highlighting the role of magnetic doping in topological insulators.

Findings

Coexistence of bulk and surface states confirmed.

Induced antiferromagnetic ordering observed.

Presence of anomalous and topological Hall effects identified.

Abstract

The magneto-transport and magnetization measurements of Sb1.90Cu0.10Te3 were performed at different temperatures and different fields. Magneto-transport measurement at high field indicates the coexistence of both bulk and surface states. The magnetization shows the induced antiferromagnetic ordering with Cu doping and the observed quantum oscillation in it indicates that magnetization in Sb1.90Cu0.10Te3 is the bulk property. The non linearity in Hall data suggests the existence of anomalous and topological Hall effect. The anomalous and topological Hall effect (THE) from measured hall data of Cu doped Sb2Te3 topological insulator have been evaluated.