Monitoring radiation damage in the LHCb Tracker Turicensis
C. Abellan Beteta, M. Atzeni, V. Battista, A. Bursche, B. Dey, A., Dosil Suarez, C. Elsasser, A. Fernandez Prieto, J. Fu, E. Graverini, I., Komarov, E. Lemos Cid, F. Lionetto, A. Mauri, A. Merli, P.R. Pais, E. Perez, Trigo, M. del Pilar Peco Regales, P. Stefko, O. Steinkamp

TL;DR
This paper details the methods used to monitor and predict radiation damage in the LHCb Tracker Turicensis, comparing measurements with simulations to ensure detector performance during LHC Runs 1 and 2.
Contribution
It introduces a comprehensive approach combining continuous monitoring and predictive modeling of radiation damage in silicon sensors for the LHCb detector.
Findings
Good agreement between measured and predicted leakage currents.
Effective estimation of full depletion voltages over time.
Validation of radiation damage models with experimental data.
Abstract
This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were estimated at regular intervals by performing dedicated scans of the charge collection efficiency as a function of the applied bias voltage. Predictions of the expected leakage currents and full depletion voltages are extracted from the simulated radiation profile, the luminosity delivered by the LHC, and the thermal history of the silicon sensors. Good agreement between measurements and predictions is found.
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