Single-layer antiferromagnetic semiconductor CoS2 with the pentagonal structure
Lei Liu, Immanuella Kankam, and Houlong L. Zhuang

TL;DR
This study uses density functional theory to investigate a novel single-layer pentagonal CoS2 antiferromagnetic semiconductor, revealing its electronic, magnetic, and strain-tunable properties, with potential applications in optoelectronics despite low magnetic transition temperatures.
Contribution
First detailed theoretical analysis of single-layer pentagonal CoS2's electronic and magnetic properties, highlighting its potential in spintronics and optoelectronic devices.
Findings
Indirect bandgap of 1.06 eV (corrected to 2.24 eV)
Out-of-plane magnetic easy axis with sizable MAE
Néel temperature estimated around 20 K
Abstract
Structure-property relationships have always been guiding principles in discovering new materials. Here we explore the relationships to discover novel two-dimensional (2D) materials with the goal of identifying 2D magnetic semiconductors for spintronics applications. In particular, we report a density functional theory + study of single-layer antiferromagnetic (AFM) semiconductor CoS with the pentagonal structure forming the so-called Cairo Tessellation. We find that this single-layer magnet exhibits an indirect bandgap of 1.06 eV with light electron and hole effective masses of 0.03 and 0.10 , respectively, which may lead to high carrier mobilities. The hybrid density functional theory calculations correct the bandgap to 2.24 eV. We also compute the magnetocrystalline anisotropy energy (MAE), showing that the easy axis of the AFM ordering is out of plane with a sizable MAE…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
