A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

TL;DR

This paper presents a CMOS-based dynamic random access architecture for efficient radio-frequency readout of quantum devices, enabling scalable control and measurement of large quantum circuits at millikelvin temperatures.

Contribution

It introduces a novel architecture combining CMOS and quantum dot technology for selective, scalable readout of quantum circuits using a DRAM-like charge storage mechanism.

Findings

Demonstrated dynamic readout of two cells with a single RF resonator.

Showed reduction in input lines per qubit for large-scale quantum device arrays.

Validated integration of CMOS circuits with quantum devices at millikelvin temperatures.

Abstract

Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and applying it to integrate silicon-based quantum devices with conventional CMOS circuits. Here, we combine both technologies at milikelvin temperatures and demonstrate the building blocks of a dynamic random access architecture for efficient readout of complex quantum circuits. Our circuit is divided into cells, each containing a CMOS quantum dot (QD) and a field-effect transistor that enables selective readout of the QD, as well as charge storage on the QD gate similar to 1T-1C DRAM technology. We show dynamic readout of two cells by interfacing them with a single radio-frequency resonator. Our results demonstrate a path to reducing the number of input lines per qubit and enable addressing of large-scale device arrays.