Diffusion of Mn in gallium nitride: Experiment and modelling

TL;DR

This study investigates manganese diffusion in gallium nitride, establishing key diffusion parameters and explaining surface depletion phenomena through experimental measurements and modelling.

Contribution

It provides the first determination of Mn diffusion coefficients in GaN and models the surface depletion caused by Mn-oxide formation and space-charge effects.

Findings

Diffusion coefficient D0 = 2x10^-4 cm^2/s

Activation energy EA = 1.8 eV

Surface Mn depletion explained by Mn-oxide blocking

Abstract

The control over the structural homogeneity is of paramount importance for ternary nitride compounds - the second most important semiconducting material-class after Si, due to its unrivalled applicability in optoelectronics, and high power/high frequency electronics. Therefore it is timely to investigate possible mechanisms influencing the crystallographic constitution of the material. In this work the diffusion mechanism of manganese in gallium nitride is investigated in two types of epilayers: Mn implanted metalorganic vapour phase epitaxy grown GaN and (Ga,Mn)N solid solution grown by molecular beam epitaxy. The extent of the Mn diffusion is established by secondary ion mass spectrometry. Analysis of the Mn profiles in the implanted samples in the frame of the infinite source diffusion led to the establishment for the first time of the pre-exponential factor DO = 2x10-4 cm2/s and diffusion activation energy EA = 1.8 eV describing the diffusion coefficient of Mn in GaN. Modelling of the out-diffusion of Mn from (Ga,Mn)N layers based on these values in turn allows to provide an explanation of the origin of the ubiquitously observed near-the-surface sizable depletion of Mn in (Ga,Mn)N, resulting from the blocking of the Mn out-diffusion by Mn-oxide and the correspondingly formed space-charge layer on the surface.