Quantum interferometry with a g-factor-tunable spin qubit

TL;DR

This paper demonstrates quantum interference effects in a silicon-based spin qubit whose energy levels are modulated via g-factors, showcasing potential for high-temperature quantum interferometry in solid-state devices.

Contribution

It introduces a method of quantum interferometry using a g-factor-tunable spin qubit in silicon, with various modulation waveforms and high-temperature operation.

Findings

Quantum interference observed in a silicon spin qubit.

Effective modulation of qubit energy levels via gate-controlled g-factors.

Potential for high-temperature quantum device applications.

Abstract

We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a double-dot configuration. The qubit energy levels are modulated via its gate-voltage-dependent g-factors, with either rectangular, sinusoidal, or ramp radio-frequency waves. The energy-modulated qubit is probed by the electron spin resonance. Our results demonstrate the potential of spin qubit interferometry implemented in a silicon device and operated at a relatively high temperature.