Thin film superconducting quantum interferometer with ultralow inductance
S.I. Bondarenko, A.V. Krevsun, E.V. Ilichev, U. Hubner, V.P. Koverya,, S. I. Link
TL;DR
This paper presents a simple fabrication method for a thin film superconducting quantum interferometer with ultralow inductance, along with experimental validation and a novel application for measuring magnetic field penetration depth.
Contribution
It introduces a new manufacturing approach for ultralow inductance SQIs and demonstrates their use in measuring magnetic field penetration depth in alloy films.
Findings
Successful fabrication of ultralow inductance SQI (~10^-13 H)
Experimental confirmation of design equations
First application of SQI to measure magnetic field penetration depth
Abstract
A simple method has been developed for manufacturing a thin film superconducting quantum interferometer (SQI) with ultralow inductance (~10^-13 H). Current-voltage and voltage-field characteristics of the SQI are presented. The basic design equations are obtained and confirmed experimentally. The SQI has been used for the first time to determine the penetration depth of a magnetic field into a film of 50% In-50% Sn alloy.
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